FQD2N90TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

QFET®

Avalanche Energy Rating (Eas) :

170 mJ

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 850mA, 10V

Transistor Application :

SWITCHING

Surface Mount :

yes

Case Connection :

DRAIN

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

1.7A

Pulsed Drain Current-Max (IDM) :

6.8A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 50W Tc

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Terminal Form :

Gull wing

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

900V

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

900V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount