FQD2N80TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Series :

QFET®

Case Connection :

DRAIN

Rise Time :

30ns

Published :

2000

Current Rating :

1.8A

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 50W Tc

Pbfree Code :

yes

Nominal Vgs :

5 V

Number of Pins :

3

Contact Plating :

Tin

Max Junction Temperature (Tj) :

150°C

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

7.2A

Power Dissipation :

2.5W

Mounting Type :

Surface Mount

Resistance :

6.3Ohm

Continuous Drain Current (ID) :

1.8A

Number of Elements :

1

REACH SVHC :

No SVHC

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

800V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Weight :

260.37mg

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Number of Channels :

1

Width :

6.1mm

JESD-30 Code :

R-PSSO-G2

Length :

6.6mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

25 ns

Voltage - Rated DC :

800V

Threshold Voltage :

3V

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Fall Time (Typ) :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 900mA, 10V

Height :

2.517mm