FQD2N80TF
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- Mfr.Part #
- FQD2N80TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1.8A DPAK
- Stock
- 19,286
- In Stock ：
- 19,286
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 800V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Supplier Device Package :
- D-Pak
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Series :
- QFET®
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 1.8A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2016
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 6.3Ohm @ 900mA, 10V
- Datasheets
- FQD2N80TF
N-Channel Tape & Reel (TR) 6.3Ohm @ 900mA, 10V ±30V 550pF @ 25V 15nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N80TF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 550pF @ 25V.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQD2N80TF Features
a 800V drain to source voltage (Vdss)
FQD2N80TF Applications
There are a lot of ON Semiconductor
FQD2N80TF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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