FQD2N60TM
- Mfr.Part #
- FQD2N60TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2A DPAK
- Stock
- 33,993
- In Stock :
- 33,993
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2000
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package :
- D-Pak
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 4.7Ohm @ 1A, 10V
- FET Type :
- N-Channel
- Datasheets
- FQD2N60TM

N-Channel Tape & Reel (TR) 4.7Ohm @ 1A, 10V ±30V 350pF @ 25V 11nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N60TM Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 25V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQD2N60TM Features
a 600V drain to source voltage (Vdss)
FQD2N60TM Applications
There are a lot of ON Semiconductor
FQD2N60TM applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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