FQD2N60TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

8A

Surface Mount :

yes

Terminal Finish :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta 45W Tc

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Series :

QFET®

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

140 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 1A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

2A Tc