FQD2N60CTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

4 Weeks

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

7.6A

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

1.9A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

120 mJ

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Number of Terminations :

2

Number of Elements :

1

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

2.5W Ta 44W Tc

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 950mA, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Packaging :

Tape and Reel (TR)

Series :

QFET®

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes