FQD2N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Current :

18A

Width :

6.22mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Power Dissipation-Max :

2.5W Ta 44W Tc

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

600V

Rise Time :

25ns

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

FET Type :

N-Channel

Height :

2.39mm

Turn-Off Delay Time :

24 ns

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.5W

Continuous Drain Current (ID) :

1.9A

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Turn On Delay Time :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Pins :

3

Current Rating :

1.9A

Case Connection :

DRAIN

Mount :

Surface Mount

Series :

QFET®

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 950mA, 10V

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Length :

6.73mm

Voltage :

650V

Fall Time (Typ) :

28 ns

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

JESD-609 Code :

e3

Voltage - Rated DC :

600V