FQD2N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Vgs (Max) :

±30V

Pbfree Code :

yes

Threshold Voltage :

4V

Height :

2.39mm

Width :

6.22mm

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Series :

QFET®

Fall Time (Typ) :

28 ns

Mounting Type :

Surface Mount

Element Configuration :

Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Continuous Drain Current (ID) :

1.9A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

600V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Rise Time :

25ns

Terminal Form :

Gull wing

Length :

6.73mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage :

650V

Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 950mA, 10V

Factory Lead Time :

4 Weeks

Number of Terminations :

2

Current Rating :

1.9A

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 44W Tc

Contact Plating :

Tin

Turn-Off Delay Time :

24 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current :

18A

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

ECCN Code :

EAR99