FQD2N50TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

Rds On (Max) @ Id, Vgs :

5.3 Ω @ 800mA, 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Number of Terminations :

2

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

1.6A

Pulsed Drain Current-Max (IDM) :

6.4A

Avalanche Energy Rating (Eas) :

120 mJ

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Surface Mount :

yes

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Power Dissipation-Max :

2.5W Ta 30W Tc

Pbfree Code :

yes

Transistor Application :

SWITCHING

Case Connection :

DRAIN