FQB5P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

4.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

3.75W Ta 40W Tc

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

55 mJ

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 2.25A, 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

18A