FQB5N50CFTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

5A

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

300 mJ

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

96W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

2

DS Breakdown Voltage-Min :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Pin Count :

3

Rds On (Max) @ Id, Vgs :

1.55 Ω @ 2.5A, 10V

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

20A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Surface Mount :

yes

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Series :

FRFET®

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Terminal Finish :

NOT SPECIFIED