FQB55N10TM

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Mfr.Part #
FQB55N10TM
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 55A D2PAK
Stock
1,014
In Stock :
1,014

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Factory Lead Time :
11 Weeks
Pulsed Drain Current-Max (IDM) :
220A
RoHS Status :
ROHS3 Compliant
Rise Time :
250ns
Drain to Source Breakdown Voltage :
100V
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Case Connection :
DRAIN
Turn On Delay Time :
25 ns
Mount :
Surface Mount
Published :
2000
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Continuous Drain Current (ID) :
55mA
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Gate to Source Voltage (Vgs) :
25V
Operating Temperature :
-55°C~175°C TJ
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
26m Ω @ 27.5A, 10V
ECCN Code :
EAR99
Width :
9.65mm
Threshold Voltage :
4V
Power Dissipation :
3.75W
Voltage - Rated DC :
100V
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Resistance :
26mOhm
Length :
6.35mm
Contact Plating :
Tin
Radiation Hardening :
No
Turn-Off Delay Time :
110 ns
Number of Elements :
1
Series :
QFET®
Current Rating :
55A
Fall Time (Typ) :
140 ns
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Power Dissipation-Max :
3.75W Ta 155W Tc
Pbfree Code :
yes
Height :
6.35mm
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
2730pF @ 25V
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Vgs (Max) :
±25V
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Weight :
1.31247g
Introducing Transistors - FETs, MOSFETs - Single onsemi FQB55N10TM from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, FQB55N10TM pinout, FQB55N10TM datasheet PDF, FQB55N10TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQB55N10TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQB55N10TM


N-Channel Tape & Reel (TR) 26m Ω @ 27.5A, 10V ±25V 2730pF @ 25V 98nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB55N10TM Description

FQB55N10TM N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications all benefit from the FQB55N10TM MOSFET.


FQB55N10TM Features

  • 55A, 100V, RDS(on) = 26mΩ(Max.) @VGS = 10 V, ID = 27.5A

  • Low gate charge ( Typ. 75nC)

  • Low Crss ( Typ. 130pF)

  • 100% avalanche tested

  • 175°C maximum junction temperature rating


FQB55N10TM Applications

  • other Industrial

  • power supplies

  • audio amplifier

  • DC motor control

  • variable switching power application


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