FQB55N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Radiation Hardening :

No

REACH SVHC :

No SVHC

Height :

6.35mm

Number of Elements :

1

Lead Free :

Lead Free

Fall Time (Typ) :

140 ns

Mount :

Surface Mount

Factory Lead Time :

11 Weeks

Vgs (Max) :

±25V

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Current Rating :

55A

Rise Time :

250ns

Pulsed Drain Current-Max (IDM) :

220A

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Turn-Off Delay Time :

110 ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Power Dissipation-Max :

3.75W Ta 155W Tc

ECCN Code :

EAR99

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 25V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

26m Ω @ 27.5A, 10V

Turn On Delay Time :

25 ns

Length :

6.35mm

Weight :

1.31247g

Transistor Element Material :

SILICON

Number of Terminations :

2

Case Connection :

DRAIN

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

25V

Width :

9.65mm

Voltage - Rated DC :

100V

Continuous Drain Current (ID) :

55mA

Power Dissipation :

3.75W

Resistance :

26mOhm

Element Configuration :

Single

Terminal Form :

Gull wing

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®