FQB55N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

26mOhm

Rise Time :

250ns

Power Dissipation :

3.75W

Mount :

Surface Mount

ECCN Code :

EAR99

Height :

6.35mm

Published :

2000

Turn On Delay Time :

25 ns

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Lead Free :

Lead Free

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Fall Time (Typ) :

140 ns

Vgs (Max) :

±25V

Threshold Voltage :

4V

Pulsed Drain Current-Max (IDM) :

220A

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Transistor Element Material :

SILICON

Contact Plating :

Tin

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight :

1.31247g

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 25V

Series :

QFET®

Factory Lead Time :

11 Weeks

REACH SVHC :

No SVHC

Length :

6.35mm

Number of Pins :

3

Radiation Hardening :

No

JESD-609 Code :

e3

Turn-Off Delay Time :

110 ns

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Rds On (Max) @ Id, Vgs :

26m Ω @ 27.5A, 10V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Continuous Drain Current (ID) :

55mA

Width :

9.65mm

Current Rating :

55A

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Gate to Source Voltage (Vgs) :

25V

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

3.75W Ta 155W Tc

Voltage - Rated DC :

100V