FQB55N10TM
- Mfr.Part #
- FQB55N10TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 55A D2PAK
- Stock
- 1,014
- In Stock :
- 1,014
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 140 ns
- Voltage - Rated DC :
- 100V
- Threshold Voltage :
- 4V
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Length :
- 6.35mm
- Rise Time :
- 250ns
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 110 ns
- Width :
- 9.65mm
- Vgs (Max) :
- ±25V
- Gate to Source Voltage (Vgs) :
- 25V
- Resistance :
- 26mOhm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- 55A
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 55mA
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 25 ns
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 27.5A, 10V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 11 Weeks
- Height :
- 6.35mm
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Published :
- 2000
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2730pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 3.75W Ta 155W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Series :
- QFET®
- Power Dissipation :
- 3.75W
- Pulsed Drain Current-Max (IDM) :
- 220A
- Weight :
- 1.31247g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Datasheets
- FQB55N10TM
FQB55N10TM Documents

N-Channel Tape & Reel (TR) 26m Ω @ 27.5A, 10V ±25V 2730pF @ 25V 98nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB55N10TM Description
FQB55N10TM N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications all benefit from the FQB55N10TM MOSFET.
FQB55N10TM Features
-
55A, 100V, RDS(on) = 26mΩ(Max.) @VGS = 10 V, ID = 27.5A
-
Low gate charge ( Typ. 75nC)
-
Low Crss ( Typ. 130pF)
-
100% avalanche tested
-
175°C maximum junction temperature rating
FQB55N10TM Applications
-
other Industrial
-
power supplies
-
audio amplifier
-
DC motor control
-
variable switching power application
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