FQB50N06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Rise Time :

105ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

15 ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.75W Ta 120W Tc

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

4 Weeks

Height :

4.83mm

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

50A

Radiation Hardening :

No

Element Configuration :

Single

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Published :

2001

Terminal Form :

Gull wing

Turn-Off Delay Time :

60 ns

Avalanche Energy Rating (Eas) :

490 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1540pF @ 25V

Power Dissipation :

3.75W

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Drain-source On Resistance-Max :

0.022Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Width :

9.65mm

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

65 ns

Current - Continuous Drain (Id) @ 25°C :

50A Tc

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Vgs (Max) :

±25V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Length :

10.67mm

Lead Free :

Lead Free

Number of Elements :

1

Voltage - Rated DC :

60V

Continuous Drain Current (ID) :

50A

Weight :

1.31247g