FQB5N50CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Length :

10.67mm

Gate to Source Voltage (Vgs) :

30V

Height :

4.83mm

Operating Temperature :

-55°C~150°C TJ

Weight :

1.31247g

Factory Lead Time :

4 Weeks

Drain to Source Breakdown Voltage :

500V

Case Connection :

DRAIN

Turn-Off Delay Time :

50 ns

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Published :

2003

Fall Time (Typ) :

48 ns

Threshold Voltage :

4V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Number of Terminations :

2

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Element Configuration :

Single

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

5A

Voltage - Rated DC :

500V

Power Dissipation-Max :

73W Tc

Number of Pins :

3

Continuous Drain Current (ID) :

5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

5A

Power Dissipation :

73W

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Additional Feature :

FAST SWITCHING

FET Type :

N-Channel

Turn On Delay Time :

12 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

9.65mm

Terminal Form :

Gull wing

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Rise Time :

46ns

Pulsed Drain Current-Max (IDM) :

20A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING