FQB5N50CTM

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Mfr.Part #
FQB5N50CTM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Stock
1,349
In Stock :
1,349

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Case Connection :
DRAIN
Vgs (Max) :
±30V
Operating Temperature :
-55°C~150°C TJ
Length :
10.67mm
Number of Pins :
3
Turn-Off Delay Time :
50 ns
Terminal Finish :
Tin (Sn)
Height :
4.83mm
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
20A
Turn On Delay Time :
12 ns
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Qualification Status :
Not Qualified
Drain Current-Max (Abs) (ID) :
5A
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 25V
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
73W Tc
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Gate to Source Voltage (Vgs) :
30V
Voltage - Rated DC :
500V
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Weight :
1.31247g
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Current Rating :
5A
Rise Time :
46ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
not_compliant
Fall Time (Typ) :
48 ns
Factory Lead Time :
4 Weeks
Continuous Drain Current (ID) :
5A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Status :
ROHS3 Compliant
Number of Terminations :
2
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Additional Feature :
FAST SWITCHING
Transistor Element Material :
SILICON
Power Dissipation :
73W
REACH SVHC :
No SVHC
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Published :
2003
Threshold Voltage :
4V
Width :
9.65mm
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2.5A, 10V
Drain to Source Breakdown Voltage :
500V
Series :
QFET®
Datasheets
FQB5N50CTM
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQB5N50CTM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, FQB5N50CTM pinout, FQB5N50CTM datasheet PDF, FQB5N50CTM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQB5N50CTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQB5N50CTM


N-Channel Tape & Reel (TR) 1.4 Ω @ 2.5A, 10V ±30V 625pF @ 25V 24nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB5N50CTM Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 625pF @ 25V.This device has a continuous drain current (ID) of [5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

FQB5N50CTM Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V


FQB5N50CTM Applications


There are a lot of ON Semiconductor
FQB5N50CTM applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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