FQB5N50CTM

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Mfr.Part #
FQB5N50CTM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Stock
1,349
In Stock :
1,349

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
50 ns
Number of Elements :
1
Case Connection :
DRAIN
Width :
9.65mm
Voltage - Rated DC :
500V
Current - Continuous Drain (Id) @ 25°C :
5A Tc
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain Current-Max (Abs) (ID) :
5A
Length :
10.67mm
JESD-30 Code :
R-PSSO-G2
Terminal Finish :
Tin (Sn)
Turn On Delay Time :
12 ns
Packaging :
Tape and Reel (TR)
Published :
2003
Transistor Application :
SWITCHING
Number of Pins :
3
Height :
4.83mm
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
4 Weeks
Operating Temperature :
-55°C~150°C TJ
Current Rating :
5A
Weight :
1.31247g
ECCN Code :
EAR99
Rise Time :
46ns
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
20A
Additional Feature :
FAST SWITCHING
Reach Compliance Code :
not_compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
500V
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
JESD-609 Code :
e3
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2.5A, 10V
Number of Terminations :
2
Series :
QFET®
Continuous Drain Current (ID) :
5A
Mount :
Surface Mount
Power Dissipation-Max :
73W Tc
Fall Time (Typ) :
48 ns
Qualification Status :
Not Qualified
Power Dissipation :
73W
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
4V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQB5N50CTM from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, FQB5N50CTM pinout, FQB5N50CTM datasheet PDF, FQB5N50CTM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQB5N50CTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQB5N50CTM


N-Channel Tape & Reel (TR) 1.4 Ω @ 2.5A, 10V ±30V 625pF @ 25V 24nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB5N50CTM Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 625pF @ 25V.This device has a continuous drain current (ID) of [5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

FQB5N50CTM Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 20A.
a threshold voltage of 4V


FQB5N50CTM Applications


There are a lot of ON Semiconductor
FQB5N50CTM applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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