FQB50N06LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

20 ns

Drain-source On Resistance-Max :

0.025Ohm

Factory Lead Time :

7 Weeks

Operating Temperature :

-55°C~175°C TJ

Weight :

1.31247g

Number of Pins :

3

Width :

9.65mm

REACH SVHC :

No SVHC

Series :

QFET®

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Threshold Voltage :

2.5V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

990 mJ

Lead Free :

Lead Free

Terminal Form :

Gull wing

Voltage - Rated DC :

60V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Contact Plating :

Tin

Number of Terminations :

2

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Rise Time :

380ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

21m Ω @ 26.2A, 10V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

145 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Power Dissipation :

3.75W

Power Dissipation-Max :

3.75W Ta 121W Tc

Height :

4.83mm

Length :

10.67mm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Current Rating :

52.4A

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Published :

2001

Continuous Drain Current (ID) :

52.4A

Current - Continuous Drain (Id) @ 25°C :

52.4A Tc

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Number of Elements :

1

Turn-Off Delay Time :

80 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB