FQB5P10TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Number of Elements :

1

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Case Connection :

DRAIN

Pbfree Code :

yes

Series :

QFET®

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 2.25A, 10V

Power Dissipation-Max :

3.75W Ta 40W Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4.5A

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

FET Type :

P-Channel

Terminal Finish :

MATTE TIN

Pin Count :

3

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

55 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

18A

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V