FQB5N90TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

65ns

Voltage - Rated DC :

900V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Number of Elements :

1

Power Dissipation-Max :

3.13W Ta 158W Tc

Height :

4.83mm

Reach Compliance Code :

not_compliant

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

900V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

5.4A

Element Configuration :

Single

Factory Lead Time :

7 Weeks

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 2.7A, 10V

Turn On Delay Time :

28 ns

Weight :

1.31247g

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V

Number of Pins :

3

Fall Time (Typ) :

50 ns

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Resistance :

2.3Ohm

Gate to Source Voltage (Vgs) :

30V

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Width :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

65 ns

Threshold Voltage :

3V

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

3.13W

Avalanche Energy Rating (Eas) :

660 mJ

Packaging :

Tape and Reel (TR)

Current Rating :

5.4A

Operating Mode :

ENHANCEMENT MODE

Length :

10.67mm