FQB5N60TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Power Dissipation-Max :

3.13W Ta 120W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

5A

Terminal Position :

Single

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

300 mJ

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

DS Breakdown Voltage-Min :

600V

Drain-source On Resistance-Max :

2Ohm

Series :

QFET®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

20A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.5A, 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 25V

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

Unknown