FQB5N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

300 mJ

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.5A, 10V

Pulsed Drain Current-Max (IDM) :

20A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

2Ohm

Pin Count :

3

Number of Elements :

1

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 25V

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.13W Ta 120W Tc

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

5A

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

DS Breakdown Voltage-Min :

600V

Reach Compliance Code :

Unknown