FQB5N60CTM
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- Mfr.Part #
- FQB5N60CTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- 4.5A, 600V, 2OHM, N CHANNEL , D2
- Stock
- 1,262
- In Stock ：
- 1,262
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Turn-Off Delay Time :
- 38 ns
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 2.25A, 10V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 4.5A
- Drain to Source Breakdown Voltage :
- 600V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Series :
- QFET®
- Power Dissipation :
- 3.13W
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 46 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 5A
- Rise Time :
- 42ns
- Number of Pins :
- 3
- Voltage - Rated DC :
- 600V
- Power Dissipation-Max :
- 3.13W Ta 100W Tc
- Published :
- 2003
- Datasheets
- FQB5N60CTM
N-Channel Tape & Reel (TR) 2.5 Ω @ 2.25A, 10V ±30V 670pF @ 25V 19nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB5N60CTM Overview
A device's maximal input capacitance is 670pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 38 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
FQB5N60CTM Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 38 ns
FQB5N60CTM Applications
There are a lot of ON Semiconductor
FQB5N60CTM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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