FQB5N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Power Dissipation :

3.13W

Published :

2003

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

46 ns

Voltage - Rated DC :

600V

Rise Time :

42ns

FET Type :

N-Channel

Mount :

Surface Mount

Mounting Type :

Surface Mount

Series :

QFET®

Turn-Off Delay Time :

38 ns

Continuous Drain Current (ID) :

4.5A

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

Power Dissipation-Max :

3.13W Ta 100W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Current Rating :

5A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB