FJN4302RTA
- Mfr.Part #
- FJN4302RTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- 0.1A, 50V, PNP, TO-92
- Stock
- 1,580
- In Stock :
- 1,580
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA 5V
- Transistor Application :
- SWITCHING
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Min Operating Temperature :
- -55°C
- Voltage - Rated DC :
- -50V
- Max Collector Current :
- 100mA
- HTS Code :
- 8541.21.00.95
- Emitter Base Voltage (VEBO) :
- -10V
- Factory Lead Time :
- 36 Weeks
- Resistor - Base (R1) :
- 10 k Ω
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 50V
- Frequency - Transition :
- 200MHz
- Lead Free :
- Lead Free
- Published :
- 2013
- Mount :
- Through Hole
- Transistor Type :
- PNP - Pre-Biased
- Width :
- 4.19mm
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Lifecycle Status :
- LIFETIME (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- -50V
- Continuous Collector Current :
- -100mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- FJN4302
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity :
- PNP
- Element Configuration :
- Single
- Height :
- 5.33mm
- hFE Min :
- 30
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- -300mV
- Current Rating :
- -100mA
- Max Operating Temperature :
- 150°C
- Transition Frequency :
- 200MHz
- Pbfree Code :
- yes
- Power Dissipation :
- 300mW
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Length :
- 5.2mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Weight :
- 240mg
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 300mW
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Datasheets
- FJN4302RTA
FJN4302RTA Documents

FJN4302RTA datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
FJN4302RTA Description
The FJN4302RTA PNP Epitaxial Silicon Transistor with built-in resistors can be an excellent space- and cost-saving solution by reducing component count and simplifying circuit design.
FJN4302RTA Features
-
100 mA Output Current Capability
-
Built-in Bias Resistor (R1=10KΩ, R2=10KΩ)
FJN4302RTA Applications
-
Digital Applications in Industrial Segments
-
Switching, Interface, and Driver Circuits
-
Inverters
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