FJN4305RTA

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Emitter Base Voltage (VEBO) :

-10V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

200MHz

Mount :

Through Hole

Number of Elements :

1

Weight :

240mg

Polarity :

PNP

Resistor - Emitter Base (R2) :

10 k Ω

Element Configuration :

Single

hFE Min :

30

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Resistor - Base (R1) :

4.7 k Ω

Frequency - Transition :

200MHz

ECCN Code :

EAR99

Mounting Type :

Through Hole

JESD-609 Code :

e3

Transistor Type :

PNP - Pre-Biased

Factory Lead Time :

36 Weeks

Radiation Hardening :

No

Max Power Dissipation :

300mW

Packaging :

Tape and Box (TB)

Current Rating :

-100mA

Length :

5.2mm

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

FJN4305

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Contact Plating :

Tin

Number of Terminations :

3

Max Breakdown Voltage :

50V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Continuous Collector Current :

-100mA

Collector Emitter Voltage (VCEO) :

50V

HTS Code :

8541.21.00.95

Max Collector Current :

100mA

Voltage - Rated DC :

-50V

Pbfree Code :

yes

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Collector Emitter Saturation Voltage :

-300mV

Min Operating Temperature :

-55°C

Height :

5.33mm

Lead Free :

Lead Free

Width :

4.19mm

Collector Base Voltage (VCBO) :

-50V

Published :

2013

Terminal Position :

BOTTOM

Power Dissipation :

300mW

Number of Pins :

3