FJN4305RTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Number of Pins :

3

Base Part Number :

FJN4305

Mount :

Through Hole

ECCN Code :

EAR99

Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Transistor Type :

PNP - Pre-Biased

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

30

Collector Base Voltage (VCBO) :

-50V

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Resistor - Base (R1) :

4.7 k Ω

Max Operating Temperature :

150°C

Packaging :

Tape and Box (TB)

Polarity :

PNP

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

50V

Published :

2013

Contact Plating :

Tin

Number of Elements :

1

Max Collector Current :

100mA

Mounting Type :

Through Hole

Height :

5.33mm

Frequency - Transition :

200MHz

Collector Emitter Saturation Voltage :

-300mV

Current Rating :

-100mA

Width :

4.19mm

Factory Lead Time :

36 Weeks

HTS Code :

8541.21.00.95

Transition Frequency :

200MHz

Weight :

240mg

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Length :

5.2mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Continuous Collector Current :

-100mA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Pbfree Code :

yes

Terminal Position :

BOTTOM

Voltage - Rated DC :

-50V

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

-10V