FJN4302RTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Application :

SWITCHING

Number of Pins :

3

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

hFE Min :

30

Power Dissipation :

300mW

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Qualification Status :

Not Qualified

Resistor - Emitter Base (R2) :

10 k Ω

Max Power Dissipation :

300mW

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Min Operating Temperature :

-55°C

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Mount :

Through Hole

Frequency - Transition :

200MHz

Width :

4.19mm

Pbfree Code :

yes

Transition Frequency :

200MHz

Emitter Base Voltage (VEBO) :

-10V

HTS Code :

8541.21.00.95

Lifecycle Status :

LIFETIME (Last Updated: 2 days ago)

Collector Emitter Voltage (VCEO) :

50V

Length :

5.2mm

Transistor Type :

PNP - Pre-Biased

Number of Elements :

1

Height :

5.33mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Factory Lead Time :

36 Weeks

Current Rating :

-100mA

Weight :

240mg

Collector Emitter Saturation Voltage :

-300mV

Collector Base Voltage (VCBO) :

-50V

Resistor - Base (R1) :

10 k Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Terminal Position :

BOTTOM

Packaging :

Tape and Box (TB)

Published :

2013

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

-100mA

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Through Hole

Polarity :

PNP

RoHS Status :

ROHS3 Compliant

Base Part Number :

FJN4302

JESD-609 Code :

e3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Lead Free :

Lead Free

Voltage - Rated DC :

-50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED