FDW2510NZ

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

24m Ω @ 6.4A, 4.5V

DS Breakdown Voltage-Min :

20V

JESD-30 Code :

R-PDSO-G8

Qualification Status :

COMMERCIAL

Series :

PowerTrench®

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

30A

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

6.4A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain-source On Resistance-Max :

0.024Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

6.4A

Power - Max :

1.1W

Terminal Form :

Gull wing