FDW2501N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Surface Mount :

yes

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Reach Compliance Code :

Unknown

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Power - Max :

600mW

Current - Continuous Drain (Id) @ 25°C :

6A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

18m Ω @ 6A, 4.5V

DS Breakdown Voltage-Min :

20V

Series :

PowerTrench®

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.018Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1290pF @ 10V

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Finish :

Tin