FDW2506P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Pbfree Code :

yes

DS Breakdown Voltage-Min :

20V

Number of Elements :

2

JESD-609 Code :

e3

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Terminations :

8

Pin Count :

8

Qualification Status :

COMMERCIAL

FET Feature :

Logic Level Gate

JESD-30 Code :

R-PDSO-G8

Reach Compliance Code :

Unknown

JEDEC-95 Code :

MO-153AA

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.022Ohm

Power - Max :

600mW

Terminal Finish :

Tin

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

22m Ω @ 5.3A, 4.5V

Drain Current-Max (Abs) (ID) :

5.3A

Input Capacitance (Ciss) (Max) @ Vds :

1015pF @ 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE