FDW2501N

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

18m Ω @ 6A, 4.5V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.018Ohm

Power - Max :

600mW

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

6A

Series :

PowerTrench®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

6A

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Tin

Pin Count :

8

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1290pF @ 10V

Reach Compliance Code :

Unknown