FDU6N50TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 10V

Mounting Type :

Through Hole

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

6A

Number of Elements :

1

Element Configuration :

Single

Published :

2013

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation-Max :

89W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

6 ns

Transistor Application :

SWITCHING

Rise Time :

55ns

Drain to Source Breakdown Voltage :

500V

Drain-source On Resistance-Max :

0.9Ohm

Series :

UniFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

900m Ω @ 3A, 10V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Weight :

343.08mg

Fall Time (Typ) :

35 ns

Factory Lead Time :

5 Weeks

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

6A Tc

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6A

FET Type :

N-Channel

Number of Pins :

3

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

270 mJ

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

Number of Terminations :

3

Turn-Off Delay Time :

25 ns

HTS Code :

8541.29.00.95

Power Dissipation :

89W

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

24A

Radiation Hardening :

No

Mount :

Through Hole