FDU6030BL
- Mfr.Part #
- FDU6030BL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A/42A IPAK
- Stock
- 3,525
- In Stock :
- 3,525
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Terminal Finish :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 100A
- Packaging :
- Tube
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSIP-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.143pF @ 15V
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 130 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Surface Mount :
- No
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 10A, 10V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta 42A Tc
- Drain-source On Resistance-Max :
- 0.016Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Power Dissipation-Max :
- 3.8W Ta 50W Tc
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- DS Breakdown Voltage-Min :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- Drain Current-Max (Abs) (ID) :
- 42A
- Number of Terminations :
- 3
- Series :
- PowerTrench®
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDU6030BL

N-Channel Tube 16m Ω @ 10A, 10V ±20V 1.143pF @ 15V 31nC @ 10V 30V TO-251-3 Short Leads, IPak, TO-251AA
FDU6030BL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The maximum input capacitance of this device is 1.143pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 42A.There is no pulsed drain current maximum for this device based on its rated peak drain current 100A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
FDU6030BL Features
the avalanche energy rating (Eas) is 130 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDU6030BL Applications
There are a lot of Rochester Electronics, LLC
FDU6030BL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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