FDU6030BL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Ta 42A Tc

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Packaging :

Tube

Avalanche Energy Rating (Eas) :

130 mJ

Rds On (Max) @ Id, Vgs :

16m Ω @ 10A, 10V

Terminal Finish :

NOT SPECIFIED

Power Dissipation-Max :

3.8W Ta 50W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

42A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Number of Elements :

1

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Series :

PowerTrench®

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

100A

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

30V

Pin Count :

3

Drain-source On Resistance-Max :

0.016Ohm

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1.143pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3