FDU6512A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

20V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Position :

Single

Drain-source On Resistance-Max :

0.021Ohm

Avalanche Energy Rating (Eas) :

90 mJ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1.082pF @ 10V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

100A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

21m Ω @ 10.7A, 4.5V

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

10.7A

FET Type :

N-Channel

Series :

PowerTrench®

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Number of Terminations :

3

JESD-609 Code :

e3

Number of Elements :

1

Packaging :

Tube

Peak Reflow Temperature (Cel) :

Not Applicable

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

10.7A Ta 36A Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

3.8W Ta 43W Tc

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

20V