FDU6612A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

Not Applicable

Mounting Type :

Through Hole

Surface Mount :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.02Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Pin Count :

3

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

90 mJ

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 30A Tc

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 5V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

9.5A

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

FET Type :

N-Channel

Terminal Position :

Single

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pulsed Drain Current-Max (IDM) :

60A

Rds On (Max) @ Id, Vgs :

20m Ω @ 9.5A, 10V

Packaging :

Tube

Power Dissipation-Max :

2.8W Ta 36W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING