FDU6680

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Drain-source On Resistance-Max :

0.01Ohm

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

100A

Avalanche Energy Rating (Eas) :

180 mJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

1.23pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

3

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Surface Mount :

No

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e3

Power Dissipation-Max :

3.3W Ta 56W Tc

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

12A

Rds On (Max) @ Id, Vgs :

10m Ω @ 12A, 10V

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

12A Ta 46A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Series :

PowerTrench®

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

Not Applicable