FDU6612A

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Number of Terminations :

3

Surface Mount :

No

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

20m Ω @ 9.5A, 10V

Pin Count :

3

Drain-source On Resistance-Max :

0.02Ohm

Qualification Status :

COMMERCIAL

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

PowerTrench®

Pbfree Code :

yes

Power Dissipation-Max :

2.8W Ta 36W Tc

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 30A Tc

Drain Current-Max (Abs) (ID) :

9.5A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

90 mJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

60A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Elements :

1

Peak Reflow Temperature (Cel) :

Not Applicable