FDU6N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Number of Terminations :

3

Radiation Hardening :

No

Fall Time (Typ) :

34 ns

Transistor Element Material :

SILICON

Height :

7.57mm

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

12 mJ

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 2.2A, 10V

Turn-Off Delay Time :

7 ns

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

18A

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

50W Tc

Mount :

Through Hole

Continuous Drain Current (ID) :

4.4A

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Number of Elements :

1

HTS Code :

8541.29.00.95

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Stub Leads, IPak

Operating Mode :

ENHANCEMENT MODE

Width :

2.5mm

DS Breakdown Voltage-Min :

250V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

250V

Published :

2013

JEDEC-95 Code :

TO-251AA

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Length :

6.8mm

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

10 ns

Rise Time :

60ns

Weight :

539mg

Series :

UniFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA