FDT86246

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Power Dissipation :

2.2W

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

6.7mm

Rise Time :

2.3ns

Drain Current-Max (Abs) (ID) :

2A

Length :

3.7mm

Feedback Cap-Max (Crss) :

5 pF

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.236Ohm

Nominal Vgs :

3.1 V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

215pF @ 75V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

150V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

REACH SVHC :

No SVHC

Package / Case :

TO-261-4, TO-261AA

Number of Pins :

4

Height :

1.7mm

Pbfree Code :

yes

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 10V

Additional Feature :

ULTRA-LOW RESISTANCE

Terminal Form :

Gull wing

Turn On Delay Time :

7.8 ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

2A

Threshold Voltage :

3.1V

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

FET Type :

N-Channel

Power Dissipation-Max :

2.2W Ta

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

250.2mg

Turn-Off Delay Time :

4.6 ns

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Fall Time (Typ) :

1.2 ns

Rds On (Max) @ Id, Vgs :

236m Ω @ 2A, 10V

Transistor Element Material :

SILICON

Number of Elements :

1