FDT86256

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.3W Ta 10W Tc

Terminal Finish :

Tin (Sn)

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

2A

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta 3A Tc

Turn-Off Delay Time :

4.8 ns

ECCN Code :

EAR99

Vgs (Max) :

±20V

Height :

1.7mm

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.845Ohm

Length :

6.7mm

Width :

3.7mm

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Published :

2011

Number of Terminations :

4

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

73pF @ 75V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G4

Radiation Hardening :

No

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-261-4, TO-261AA

Fall Time (Typ) :

2.6 ns

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Turn On Delay Time :

2.7 ns

Continuous Drain Current (ID) :

1.2A

FET Type :

N-Channel

Weight :

188mg

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

Drain Current-Max (Abs) (ID) :

3A

Transistor Application :

SWITCHING

Series :

PowerTrench®

Terminal Form :

Gull wing

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

150V

Power Dissipation :

2.3W

Rds On (Max) @ Id, Vgs :

845m Ω @ 1.2A, 10V

Rise Time :

1.7ns