FDT86106LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.2W

Weight :

250.2mg

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Series :

PowerTrench®

ECCN Code :

EAR99

Radiation Hardening :

No

Case Connection :

DRAIN

FET Type :

N-Channel

Terminal Position :

Dual

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

10 ns

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Fall Time (Typ) :

1.5 ns

Length :

3.7mm

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

3.2A

Transistor Application :

SWITCHING

Threshold Voltage :

1.5V

Height :

1.7mm

Nominal Vgs :

1.5 V

Package / Case :

TO-261-4, TO-261AA

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Number of Pins :

4

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Power Dissipation-Max :

2.2W Ta

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

315pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

1.3ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Factory Lead Time :

8 Weeks

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

108m Ω @ 3.2A, 10V

Published :

2006

Feedback Cap-Max (Crss) :

5 pF

Width :

6.7mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

3.8 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3