FDT86106LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Number of Terminations :

4

Mounting Type :

Surface Mount

Nominal Vgs :

1.5 V

Packaging :

Tape and Reel (TR)

Width :

6.7mm

Transistor Application :

SWITCHING

Mount :

Surface Mount

Power Dissipation :

2.2W

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Fall Time (Typ) :

1.5 ns

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Weight :

250.2mg

Threshold Voltage :

1.5V

Number of Pins :

4

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

ECCN Code :

EAR99

FET Type :

N-Channel

Power Dissipation-Max :

2.2W Ta

Terminal Position :

Dual

Turn On Delay Time :

3.8 ns

Continuous Drain Current (ID) :

3.2A

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Series :

PowerTrench®

Terminal Finish :

Tin (Sn)

Feedback Cap-Max (Crss) :

5 pF

Turn-Off Delay Time :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-261-4, TO-261AA

Height :

1.7mm

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

108m Ω @ 3.2A, 10V

Number of Elements :

1

Length :

3.7mm

Pbfree Code :

yes

Published :

2006

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

315pF @ 50V

Rise Time :

1.3ns