FDT86106LZ
- Mfr.Part #
- FDT86106LZ
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- FDT86106 - N-CHANNEL POWERTRENCH
- Stock
- 1,340
- In Stock :
- 1,340
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 3.8 ns
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 108m Ω @ 3.2A, 10V
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 1.5 ns
- Threshold Voltage :
- 1.5V
- Feedback Cap-Max (Crss) :
- 5 pF
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Mount :
- Surface Mount
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
- Rise Time :
- 1.3ns
- Weight :
- 250.2mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 3.7mm
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 10V
- Height :
- 1.7mm
- Power Dissipation :
- 2.2W
- Number of Terminations :
- 4
- Terminal Finish :
- Tin (Sn)
- Nominal Vgs :
- 1.5 V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2006
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 315pF @ 50V
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 2.2W Ta
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 3.2A
- Width :
- 6.7mm
- Drain to Source Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 10 ns
- Package / Case :
- TO-261-4, TO-261AA
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- Datasheets
- FDT86106LZ
N-Channel Tape & Reel (TR) 108m Ω @ 3.2A, 10V ±20V 315pF @ 50V 7nC @ 10V TO-261-4, TO-261AA
FDT86106LZ Description
With a voltage of 100V, the FDT86106LZ is an N-channel Power MOSFET transistor from ON Semiconductor. FDT86106LZ has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 2.2W. This N-Channel Logic Level MOSFET is made with a sophisticated Power Trench? technology that has been specially designed to reduce on-state resistance while maintaining excellent switching performance. To improve the ESD voltage level, a G-S Zener has been installed.
FDT86106LZ Features
-
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
-
Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
-
High-performance trench technology for extremely low RDS(on)
-
High power and current handling capability in a widely used surface mount package
-
HBM ESD protection level > 3 VK typical (Note 4)
-
100% UIL tested
-
RoHS Compliant
FDT86106LZ Applications
-
This product is general usage and suitable for many different applications.
-
DC-DC Conversion
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