FDT86106LZ

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Mfr.Part #
FDT86106LZ
Manufacturer
Fairchild Semiconductor
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
FDT86106 - N-CHANNEL POWERTRENCH
Stock
1,340
In Stock :
1,340

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Additional Feature :
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Element Configuration :
Single
Threshold Voltage :
1.5V
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
108m Ω @ 3.2A, 10V
Mount :
Surface Mount
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
3.8 ns
Nominal Vgs :
1.5 V
FET Type :
N-Channel
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Rise Time :
1.3ns
Number of Elements :
1
Number of Terminations :
4
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Input Capacitance (Ciss) (Max) @ Vds :
315pF @ 50V
JESD-609 Code :
e3
Weight :
250.2mg
Length :
3.7mm
Power Dissipation :
2.2W
Package / Case :
TO-261-4, TO-261AA
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Feedback Cap-Max (Crss) :
5 pF
Height :
1.7mm
Terminal Position :
Dual
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Published :
2006
Width :
6.7mm
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
3.2A Ta
Continuous Drain Current (ID) :
3.2A
Power Dissipation-Max :
2.2W Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
4
Mounting Type :
Surface Mount
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
10 ns
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 11 hours ago)
Terminal Form :
Gull wing
Fall Time (Typ) :
1.5 ns
Series :
PowerTrench®
Drain to Source Breakdown Voltage :
100V
Case Connection :
DRAIN
Datasheets
FDT86106LZ
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDT86106LZ from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Mounting Type:Surface Mount, FDT86106LZ pinout, FDT86106LZ datasheet PDF, FDT86106LZ amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDT86106LZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tape & Reel (TR) 108m Ω @ 3.2A, 10V ±20V 315pF @ 50V 7nC @ 10V TO-261-4, TO-261AA

FDT86106LZ Description


With a voltage of 100V, the FDT86106LZ is an N-channel Power MOSFET transistor from ON Semiconductor. FDT86106LZ has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 2.2W. This N-Channel Logic Level MOSFET is made with a sophisticated Power Trench? technology that has been specially designed to reduce on-state resistance while maintaining excellent switching performance. To improve the ESD voltage level, a G-S Zener has been installed.



FDT86106LZ Features


  • Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A

  • Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A

  • High-performance trench technology for extremely low RDS(on)

  • High power and current handling capability in a widely used surface mount package

  • HBM ESD protection level > 3 VK typical (Note 4)

  • 100% UIL tested

  • RoHS Compliant



FDT86106LZ Applications


  • This product is general usage and suitable for many different applications.

  • DC-DC Conversion


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