FDT86244

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

1.3ns

JESD-609 Code :

e3

Power Dissipation-Max :

2.2W Ta

RoHS Status :

ROHS3 Compliant

Weight :

250.2mg

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.8A

Published :

2011

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Width :

6.7mm

Gate to Source Voltage (Vgs) :

20V

Length :

3.7mm

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Height :

1.7mm

Case Connection :

DRAIN

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5.3 ns

Pbfree Code :

yes

Power Dissipation :

2.2W

Packaging :

Tape and Reel (TR)

Threshold Voltage :

3.1V

Additional Feature :

ULTRA-LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

Drain to Source Breakdown Voltage :

150V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Number of Pins :

4

Nominal Vgs :

3.1 V

Turn-Off Delay Time :

9.8 ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

2.4 ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

FET Type :

N-Channel

Element Configuration :

Single

Feedback Cap-Max (Crss) :

5 pF

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rds On (Max) @ Id, Vgs :

128m Ω @ 2.8A, 10V

Factory Lead Time :

9 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

395pF @ 75V

Package / Case :

TO-261-4, TO-261AA