FDT86244
- Mfr.Part #
- FDT86244
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 2.8A SOT223-4
- Stock
- 119,582
- In Stock :
- 119,582
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 1.3ns
- Additional Feature :
- ULTRA-LOW RESISTANCE
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 150V
- Continuous Drain Current (ID) :
- 2.8A
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Turn On Delay Time :
- 5.3 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Power Dissipation :
- 2.2W
- Rds On (Max) @ Id, Vgs :
- 128m Ω @ 2.8A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- 3.1 V
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 10V
- Published :
- 2011
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.7mm
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 395pF @ 75V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 3.1V
- Power Dissipation-Max :
- 2.2W Ta
- Turn-Off Delay Time :
- 9.8 ns
- Feedback Cap-Max (Crss) :
- 5 pF
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 2.4 ns
- REACH SVHC :
- No SVHC
- Weight :
- 250.2mg
- Number of Pins :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Case Connection :
- DRAIN
- Length :
- 3.7mm
- Factory Lead Time :
- 9 Weeks
- Width :
- 6.7mm
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Datasheets
- FDT86244

N-Channel Tape & Reel (TR) 128m Ω @ 2.8A, 10V ±20V 395pF @ 75V 7nC @ 10V TO-261-4, TO-261AA
FDT86244 Description
The ON Semiconductor FDT86244 N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance and ruggedness.
FDT86244 Features
-
High power and current handling capability in a widely used surface mount package
-
Fast switching speed
-
100% UIL Tested
-
RoHS Compliant
-
Max rDS(on) = 128 m? at VGS = 10 V, ID = 2.8 A
-
Max rDS(on) = 178 m? at VGS = 6 V, ID = 2.4 A
-
High-performance trench technology for extremely low RDS(on)
FDT86244 Applications
-
Consumer Appliances
-
Load Switch
-
Primary Switch
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