FDT86113LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Number of Elements :

1

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.2W

Element Configuration :

Single

Rise Time :

1.3ns

Length :

3.7mm

Radiation Hardening :

No

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Height :

1.7mm

Input Capacitance (Ciss) (Max) @ Vds :

315pF @ 50V

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Turn On Delay Time :

3.8 ns

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.3A, 10V

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Position :

Dual

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

1.5 ns

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Package / Case :

TO-261-4, TO-261AA

Feedback Cap-Max (Crss) :

5 pF

Width :

6.7mm

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

10 ns

Published :

2011

Continuous Drain Current (ID) :

3.3A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1.7V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.2W Ta

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Terminations :

4

Terminal Form :

Gull wing

JESD-609 Code :

e3

Weight :

250.2mg