FDT86102LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.4V

Published :

2006

Transistor Element Material :

SILICON

Radiation Hardening :

No

Lead Free :

Lead Free

Continuous Drain Current (ID) :

6.6A

Terminal Position :

Dual

Element Configuration :

Single

Rise Time :

1.9ns

Mounting Type :

Surface Mount

Number of Channels :

1

Power Dissipation-Max :

2.2W Ta

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

6.6 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1490pF @ 50V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

250.2mg

Fall Time (Typ) :

2.2 ns

Factory Lead Time :

8 Weeks

Height :

1.8mm

Max Junction Temperature (Tj) :

150°C

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

6.6A Ta

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Number of Terminations :

4

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

28m Ω @ 6.6A, 10V

Package / Case :

TO-261-4, TO-261AA

Turn-Off Delay Time :

19 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Power Dissipation :

1W

Drain-source On Resistance-Max :

0.028Ohm

Mount :

Surface Mount

Width :

6.7mm

Length :

3.7mm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Pins :

4

Number of Elements :

1

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

ECCN Code :

EAR99