FDT86102LZ

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Mfr.Part #
FDT86102LZ
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 6.6A SOT223-4
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Vgs (Max) :
±20V
Series :
PowerTrench®
Element Configuration :
Single
Drain-source On Resistance-Max :
0.028Ohm
Number of Terminations :
4
Input Capacitance (Ciss) (Max) @ Vds :
1490pF @ 50V
Turn On Delay Time :
6.6 ns
Lifecycle Status :
ACTIVE (Last Updated: 11 hours ago)
REACH SVHC :
No SVHC
Gate to Source Voltage (Vgs) :
20V
Threshold Voltage :
1.4V
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Terminal Position :
Dual
Current - Continuous Drain (Id) @ 25°C :
6.6A Ta
Rds On (Max) @ Id, Vgs :
28m Ω @ 6.6A, 10V
Number of Channels :
1
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
19 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Published :
2006
Factory Lead Time :
8 Weeks
Length :
3.7mm
Mounting Type :
Surface Mount
Number of Elements :
1
Rise Time :
1.9ns
Weight :
250.2mg
Continuous Drain Current (ID) :
6.6A
Transistor Application :
SWITCHING
Height :
1.8mm
JESD-609 Code :
e3
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
100V
Number of Pins :
4
Power Dissipation :
1W
Power Dissipation-Max :
2.2W Ta
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Package / Case :
TO-261-4, TO-261AA
Mount :
Surface Mount
Width :
6.7mm
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Max Junction Temperature (Tj) :
150°C
Fall Time (Typ) :
2.2 ns
Introducing Transistors - FETs, MOSFETs - Single onsemi FDT86102LZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Package / Case:TO-261-4, TO-261AA, FDT86102LZ pinout, FDT86102LZ datasheet PDF, FDT86102LZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDT86102LZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDT86102LZ


N-Channel Tape & Reel (TR) 28m Ω @ 6.6A, 10V ±20V 1490pF @ 50V 25nC @ 10V TO-261-4, TO-261AA

FDT86102LZ    Description

 

 The N-channel MOSFET uses an advanced PowerTritch manufacturing process that is customized to minimize on-resistance and switching loss. Gmurs Zener is added to improve the ESD voltage level.

 

FDT86102LZ     Features

 

Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A

Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A

HBM ESD protection level > 6 kV typical (Note 4)

Very low Qg and Qgd compared to competing trench technologies

Fast switching speed

100% UIL Tested

RoHS Compliant


FDT86102LZ      Applications


This product is general usage and suitable for many different applications.

DC-DC Conversion

Inverter

Synchronous Rectifier

 

 



 



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