FDS9933

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

900mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

55m Ω @ 3.2A, 4.5V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Surface Mount :

yes

Number of Elements :

2

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

5A

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

30A

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.055Ohm

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V