FDS9431A-F085
- Mfr.Part #
- FDS9431A-F085
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.5A 8SOIC
- Stock
- 34,230
- In Stock :
- 34,230
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 21 ns
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.13Ohm
- Number of Elements :
- 1
- Turn On Delay Time :
- 6.5 ns
- Power Dissipation :
- 2.5W
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 3.5A, 4.5V
- Weight :
- 230.4mg
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- Terminal Position :
- Dual
- Vgs (Max) :
- ±8V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Number of Terminations :
- 8
- Turn-Off Delay Time :
- 31 ns
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 3.5A
- Number of Pins :
- 8
- Published :
- 1999
- Power Dissipation-Max :
- 2.5W Ta
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Drain to Source Voltage (Vdss) :
- 20V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 4.5V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Ta
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Drain to Source Breakdown Voltage :
- -20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 405pF @ 10V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Rise Time :
- 20ns
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e4
- Datasheets
- FDS9431A-F085

P-Channel Tape & Reel (TR) 130m Ω @ 3.5A, 4.5V ±8V 405pF @ 10V 8.5nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
FDS9431A-F085 Overview
A device's maximum input capacitance is 405pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 31 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
FDS9431A-F085 Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 31 ns
a 20V drain to source voltage (Vdss)
FDS9431A-F085 Applications
There are a lot of ON Semiconductor
FDS9431A-F085 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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