FDS9435A
- Mfr.Part #
- FDS9435A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 5.3A 8SOIC
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- -30V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Turn-Off Delay Time :
- 14 ns
- Dual Supply Voltage :
- -30V
- Terminal Position :
- Dual
- Power Dissipation :
- 2.5W
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -30V
- Turn On Delay Time :
- 7 ns
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Current Rating :
- -5.3A
- Width :
- 4mm
- Number of Channels :
- 1
- Termination :
- SMD/SMT
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Number of Terminations :
- 8
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 9 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Contact Plating :
- Tin
- Threshold Voltage :
- -1.7V
- Rise Time :
- 13ns
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Published :
- 2001
- Height :
- 1.75mm
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.3A, 10V
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.05Ohm
- Element Configuration :
- Single
- Factory Lead Time :
- 18 Weeks
- Nominal Vgs :
- -1.7 V
- JESD-609 Code :
- e4
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 528pF @ 15V
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Vgs (Max) :
- ±25V
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Length :
- 5mm
- Power Dissipation-Max :
- 2.5W Ta
- Continuous Drain Current (ID) :
- -5.3A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- Weight :
- 130mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 175°C
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDS9435A
FDS9435A Documents

P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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