FDS9435A
- Mfr.Part #
- FDS9435A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 5.3A 8SOIC
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- JESD-609 Code :
- e4
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 528pF @ 15V
- Current Rating :
- -5.3A
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 9 ns
- Height :
- 1.75mm
- Power Dissipation-Max :
- 2.5W Ta
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5mm
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±25V
- Width :
- 4mm
- Drain to Source Breakdown Voltage :
- -30V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 14 ns
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Dual Supply Voltage :
- -30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- Power Dissipation :
- 2.5W
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Turn On Delay Time :
- 7 ns
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -30V
- Threshold Voltage :
- -1.7V
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain-source On Resistance-Max :
- 0.05Ohm
- Published :
- 2001
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- REACH SVHC :
- No SVHC
- Max Junction Temperature (Tj) :
- 175°C
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.3A, 10V
- Nominal Vgs :
- -1.7 V
- Number of Channels :
- 1
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Voltage (Vdss) :
- 30V
- FET Type :
- P-Channel
- Pbfree Code :
- yes
- Factory Lead Time :
- 18 Weeks
- Continuous Drain Current (ID) :
- -5.3A
- Series :
- PowerTrench®
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Elements :
- 1
- Rise Time :
- 13ns
- Weight :
- 130mg
- Datasheets
- FDS9435A
FDS9435A Documents

P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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