FDS9435A
- Mfr.Part #
- FDS9435A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 5.3A 8SOIC
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.75mm
- JESD-609 Code :
- e4
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.3A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 9 ns
- Max Junction Temperature (Tj) :
- 175°C
- Rise Time :
- 13ns
- Drain to Source Voltage (Vdss) :
- 30V
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Drain-source On Resistance-Max :
- 0.05Ohm
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.5W
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Terminal Form :
- Gull wing
- Dual Supply Voltage :
- -30V
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- -1.7V
- Turn On Delay Time :
- 7 ns
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- -5.3A
- Terminal Position :
- Dual
- Factory Lead Time :
- 18 Weeks
- Drain to Source Breakdown Voltage :
- -30V
- Number of Pins :
- 8
- Number of Elements :
- 1
- Current Rating :
- -5.3A
- Radiation Hardening :
- No
- Vgs (Max) :
- ±25V
- Length :
- 5mm
- ECCN Code :
- EAR99
- Nominal Vgs :
- -1.7 V
- Voltage - Rated DC :
- -30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Width :
- 4mm
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 14 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 528pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 2.5W Ta
- Lead Free :
- Lead Free
- Published :
- 2001
- Weight :
- 130mg
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Datasheets
- FDS9435A

P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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