FDS9435A
- Mfr.Part #
- FDS9435A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- -1.7V
- Width :
- 4mm
- Turn On Delay Time :
- 7 ns
- Contact Plating :
- Tin
- JESD-609 Code :
- e4
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.05Ohm
- Vgs (Max) :
- ±25V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Lead Free :
- Lead Free
- Power Dissipation :
- 2.5W
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -30V
- Operating Temperature :
- -55°C~175°C TJ
- Termination :
- SMD/SMT
- Rise Time :
- 13ns
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.3A, 10V
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 175°C
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- -5.3A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 130mg
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Nominal Vgs :
- -1.7 V
- Length :
- 5mm
- Dual Supply Voltage :
- -30V
- Number of Terminations :
- 8
- Gate to Source Voltage (Vgs) :
- 25V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Power Dissipation-Max :
- 2.5W Ta
- Current Rating :
- -5.3A
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- -30V
- Pbfree Code :
- yes
- Height :
- 1.75mm
- Fall Time (Typ) :
- 9 ns
- Turn-Off Delay Time :
- 14 ns
- Factory Lead Time :
- 18 Weeks
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 528pF @ 15V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Datasheets
- FDS9435A

P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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