FDS8984

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Current Rating :

7A

Published :

2001

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

5 ns

Packaging :

Tape and Reel (TR)

Weight :

187mg

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

30A

Mounting Type :

Surface Mount

Width :

4mm

Voltage - Rated DC :

30V

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mount :

Surface Mount

Fall Time (Typ) :

9 ns

Rise Time :

9ns

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

10 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 15V

REACH SVHC :

No SVHC

Resistance :

23mOhm

Threshold Voltage :

1.7V

Series :

PowerTrench®

Nominal Vgs :

1.7 V

Element Configuration :

Dual

Number of Pins :

8

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

Lead Free :

Lead Free

Height :

1.5mm

Length :

5mm

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Number of Terminations :

8

Power Dissipation :

1.6W

Drain Current-Max (Abs) (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7mA

ECCN Code :

EAR99

Turn-Off Delay Time :

42 ns

Contact Plating :

Tin

FET Feature :

Logic Level Gate

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1.6W