FDS8962C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Pin Count :

8

Power - Max :

900mW

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Series :

PowerTrench®

Drain Current-Max (Abs) (ID) :

7A

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

20A

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

7A 5A

FET Type :

N and P-Channel

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Terminations :

8

Drain-source On Resistance-Max :

0.03Ohm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ